S-Band
MACOM’s GaN-on-SiC products are well suited for pulsed and CW S-band applications. With a variety of power levels, high gain/stage and high power-added efficiency, MACOM’s products support continuous improvements in SWAP-C benchmarks, thereby supporting the next generation of radar systems in areas such as air traffic control, weather radar, and shipborne radars.
Part Number | Description |
---|---|
CGHV1F025 | 25 W; DC - 15 GHz; 40 V; GaN HEMT |
CGHV60170D-GP4 | 170 W; 6.0 GHz; 50 V GaN HEMT Die |
CGHV35150 | 150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems |
CGHV40320D-GP4 | 320 W; 4.0 GHz; GaN HEMT Die |
CGHV35400 | 400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems |
CGHV27030 | 30 W; DC - 6.0 GHz; GaN HEMT |
CG2H80015D-GP4 | 15 W; 8.0 GHz ; GaN HEMT Die |
CG2H30070 | 70 W; 0.5 - 3.0 GHz; GaN HEMT |
CGHV40050 | 50 W; DC - 4.0 GHz; 50 V; GaN HEMT |
CGH55030 | 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX |
CGH60060D-GP4 | 60 W; 6.0 GHz; GaN HEMT Die |
CGH40120 | 120 W RF Power GaN HEMT |
CGH60008D-GP4 | 8 W; 6.0 GHz; GaN HEMT Die |
CMPA2735015 | 15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier |
CGHV40100 | 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT |
CGH27030 | 30 W, DC - 6.0 GHz, 28 V, GaN HEMT |
CG2H40035 | 35 W RF Power GaN HEMT |
CGHV35120F | 120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems |
CGHV1J006D-GP4 | 6 W; 18.0 GHz; GaN HEMT Die |
CGH27060F | 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz |
CGH60030D-GP4 | 30 W; 6.0 GHz; GaN HEMT Die |
CGH40045 | 45 W RF Power GaN HEMT |
CMPA2738060 | 80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier |
CGH35060P2 | 60 W; 3100 - 3500 MHz; 28 V GaN HEMT |
CMPA5259050 | 50 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers |
CG2H40010 | 10 W RF Power GaN HEMT |
CGH40010 | 10 W RF Power GaN HEMT |
CMPA5259100 | 5.0 - 5.9 GHz, 100W GaN MMIC HPA |
CMPA2935150 | 150W; 2.9 - 3.5 GHz; GaN MMIC |
CGH60015D-GP4 | 15 W; 6.0 GHz; GaN HEMT Die |
CGH31240F | 240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems |
CGHV60075D5-GP4 | 75 W; 6.0 GHz; GaN HEMT Die |
CGHV35060MP | 60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations |
CG2H80030D-GP4 | 30 W; 8.0 GHz; GaN HEMT Die |
CMPA2560025 | 25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier |
CGH27015 | 15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
CGH60120D-GP4 | 120 W; 6.0 GHz; GaN HEMT Die |
CG2H80045D-GP4 | 45 W, 8.0 GHz, GaN HEMT Die |
CMPA3135060S | 3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier |
CG2H40025 | 25 W RF Power GaN HEMT |
CGHV40030 | 30 W; DC - 6 GHz; 50 V; GaN HEMT |
CMPA0060002 | 2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier |
CGH27015P | 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
CMPA2735075 | 75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier |
CGH40180 | 180 W RF Power GaN HEMT |
CG2H80120D-GP4 | 120 W; DC - 8000 MHz; 28 V; GaN HEMT Die |
CGHV38375F | 2.75 - 3.75, 400W GaN on SiC HPA |
CMPA0060025 | 25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier |
CMPA0527005 | 5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers |
CG2H40045 | 45 W RF Power GaN HEMT |
CGH40006 | 6 W RF Power GaN HEMT |
CGHV1J070D-GP4 | 70 W; 18.0 GHz; GaN HEMT Die |
CMPA2060035 | 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier |
CG2H80060D-GP4 | 60 W; 8.0 GHz; GaN HEMT Die |
CGH40035 | 35 W RF Power GaN HEMT |
CGHV37400F | 400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems |
CGH21240 | 240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX |
CGH40025 | 25 W RF Power GaN HEMT |
CGHV1J025D-GP4 | 25 W; 18.0 GHz; GaN HEMT Die |
CMPA2735030 | 30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier |
CGHV27060 | 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications |
CGHV27015S | 15 W; DC - 6.0 GHz; 50 V; GaN HEMT |
CGH40090 | 90 W RF Power GaN HEMT |
CGHV31500 | 500W, 2.7 - 3.1 GHz, GaN IMFET |
CGHV60040D-GP4 | 40 W; 6.0 GHz; GaN HEMT Die |
CGHV1F006 | 6 W; DC - 15.0 GHz; 40 V; GaN HEMT |