CG2H40035
35 W RF Power GaN HEMT
The CG2H40035 is an unmatched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down; flange package and solder-down; pill packages.