CGHV27015S

15 W; DC - 6.0 GHz; 50 V; GaN HEMT

The CGHV27015S is an unmatched;  gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV27015S ideal for LTE; 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT devices are suitable for 3300-3500MHz; 4900-5900MHz; 700-960MHz; 1800-2200MHz; 2500-2700MHz and extended S and C Band applications. The CGHV27015S operates from a 50 volt rail. The transistor is available in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package. 

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Product Specifications

Part Number
CGHV27015S
Description
15 W; DC - 6.0 GHz; 50 V; GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Gain(dB)
21.0

Features

  • 2.4 – 2.7 GHz Operation
  • 15 W Typical Output Power
  • 21 dB Gain at 2.5 W PAVE
  • -38 dBc ACLR at 2.5 W PAVE
  • 32% efficiency at 2.5 W PAVE
  • High degree of APD and DPD correction can be applied

Technical Resources

Datasheet

Model Data (Sparameters)

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CGHV27015S
GaN HEMT, G50V3-2E, 15W, 2.7GHz, QFN, 83
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