CGH40006
6 W RF Power GaN HEMT
The CGH40006 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40006; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40006 ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down pill package and a 3-mm x 3-mm; surface-mount; dual-flat-no-lead package.
Product Specifications
- Part Number
- CGH40006
- Description
- 6 W RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Gain(dB)
- 11.0
- Package Category
- Pill, Surface Mount
Features
- Up to 6 GHz Operation
- 13 dB Small Signal Gain at 2.0 GHz
- 11 dB Small Signal Gain at 6.0 GHz
- 8 W typical at PIN = 32 dBm
- 28 V Operation
Technical Resources
Datasheet
Model Data (Sparameters)
- CGH40006P S-parameters - VDS = 28 V - IDQ = 100 mA
- CGH40006P S-parameters - VDS = 28 V - IDQ = 100 mA - 50 MHz - 1 GHz
- CGH40006S - 100 mA - 2 MHz - 2000 MHz
- CGH40006S - 100 mA - 500 MHz - 6000 MHz
- CGH40006S - 100 mA - 2 MHz - 2000 MHz
- CGH40006S - 100 mA - 500 MHz - 6000 MHz