CG2H40045

45 W RF Power GaN HEMT

The CG2H40045 is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CG2H40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

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Product Specifications

Part Number
CG2H40045
Description
45 W RF Power GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
4000

Features

  • 18 dB Small Signal Gain at 2.0 GHz
  • 14 dB Small Signal Gain at 4.0 GHz
  • 55 W Typical PSAT
  • 60% Efficiency at PSAT
  • 28 V Operation

Technical Resources

Datasheet

Model Data (Sparameters)

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CG2H40045F
45W, 4.0GHz, GaN HEMT G28V4 (CG2H40045F)
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CG2H40045F-AMP
AMPLIFIER ASSY, 4.0GHz, CG2H40045F
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CG2H40045P
45W, 4.0GHz, GaN HEMT G28V4 (CG2H40045P)
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