45 W RF Power GaN HEMT

Note: CGH40045F/P are Not Recommended for New Designs. Refer to CG2H40045F/P. The CGH40045 is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.