CGH27060F

8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz

Note: CGH27060F is Not Recommended for New Designs. Refer to CG2H40045F. The CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27060F ideal for VHF; Comms; 3G; 4G; LTE; 2.3 - 2.9 GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.

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Product Specifications

Part Number
CGH27060F
Description
8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
4000
Gain(dB)
14.0

Features

  • VHF – 3.0 GHz Operation
  • 14 dB Small Signal Gain
  • 8.0 W PAVE at < 2.0% EVM
  • 27% Drain Efficiency at 8 W Average Power

Technical Resources

Datasheet

Model Data (Sparameters)

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CGH27060F
8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz
Order Get a Quote Get a Sample