CGHV1J006D-GP4
6 W; 18.0 GHz; GaN HEMT Die
The CGHV1J006D is a high-voltage gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate; using a 0.25-?m gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
Product Specifications
- Part Number
- CGHV1J006D-GP4
- Description
- 6 W; 18.0 GHz; GaN HEMT Die
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 18000
- Gain(dB)
- 17.0
- Package Category
- Die
Features
- 17 dB Typ. Small Signal Gain at 10 GHz
- 60% Typ. PAE at 10 GHz
- 6 W Typical Psat
- 40 V Operation
- Up to 18GHz Operation