CMPA2735030

30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier

The CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

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Product Specifications

Part Number: CMPA2735030
Description: 30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier
Min Frequency(MHz): 2700
Max Frequency(MHz): 3500
Gain(dB): 30.0
Package Category: Die

Features

Operation up to 50 V
High Breakdown Voltage
Offered in a 5mm x 5mm; QFN package
High Temperature Operation

Technical Resources

Datasheet

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CMPA2735030D

MMIC, GaN, BARE DIE, DA, 30W, 2.7-3.5GHz

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CMPA2735030S

MMIC, GaN HEMT, G50V3-1C, 30W, 2.7-3.5GH

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