Switches-SPST
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
| Compare | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Millimeter Wave Reflective SPST with TTL Driver 1 - 26 .5GHz | 1000 | 26500 | 3.100 | 50 | 38 | |||||
| High Isolation, GaAs pHEMT MMIC | 5 | 1000 | 0.700 | 53 | 52 | 1.5 | ||||
| GaAs | 0 | 3000 | 1.500 | 27 | 40 | 27 | 2.5 | |||
| GaAs High Isolation | 300 | 4000 | 1.600 | 51 | 49 | 27 | 0.2 | |||
| (non-RoHS) Matched GaAs SPST Switch | 5 | 4000 | 2.000 | 22 | 46 | 27 | ||||
| GaAs | 50 | 2500 | 1.000 | 48 | 46 | 23 | 2.5 | |||
| AlGaAs Absorptive | 50 | 50000 | 1.200 | 48 | 40 | 0.2 | MADR-007097 | |||
| AlGaAs Reflective | 50 | 50000 | 0.200 | 43 | 40 | 0.2 | MADR-007097, MADR-011022 | |||
| HMIC™ PIN Diode | 50 | 26500 | 0.600 | 48 | 40 | 2.0 | MADR-007097, MADR-011020 | |||
| Matched GaAs SPST Switch, DC-3.0 GHz with TTL/CMOS Control Input | 0 | 3000 | 0.800 | 40 | 46 | 27 | 2.5 | |||
| GaAs SPST Switch DC - 6 GHz | 100 | 6000 | 0.900 | 45 | 46 | 27 | 2.5 | |||
| HMIC PIN Diode,50W | 45 | 2500 | 0.300 | 65 | 40 | 50.0 | MADR-011020 |