MSS50-046-P55

High Barrier Si Single

MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer and detector performance is obtained with LO power of +2 dBm to +8 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.

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Product Specifications

Part Number
MSS50-046-P55
Description
High Barrier Si Single
Vb
2.00
Total Capacitance(pF)
0.230
Dynamic Resistance(ohms)
20.0

Features

  • VF, RD and CJ matching options.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices.

Technical Resources

Data Sheet

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MSS50-046-P55
Schottky Diode,Chip,Package P55-1
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