MSS30-B53-H40

Silicon Schottky Bridge Quad Diodes

MACOM's MSS CR Series of Schottky crossover quad diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Barrier heights for LO power levels from 3 dBm to +17 dBm are available.

Data Sheet Get a Sample Order Now Get a Quote Tech Support Product Inquiry
  1. Home
  2. Products
  3. RF/Microwave & mmWave
  4. Diodes
  5. Schottky Diodes
  6. Schottky Mixer and Detector Diodes
  7. MSS30-B53-H40

Product Specifications

Part Number
MSS30-B53-H40
Description
Silicon Schottky Bridge Quad Diodes
Vf(V)
0.3000
Vb
2.00
Total Capacitance(pF)
0.380
Dynamic Resistance(ohms)
15.0

Features

  • Available in four barrier heights
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Beam lead or packaged devices

Technical Resources

Datasheet

Order from MACOM

MSS30-B53-H40
Schottky Diode,Beamlead, H40
Order Get a Quote Get a Sample