MASW4030G
GaAs
The MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is fabricated using a mature 1-micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability.
Product Specifications
- Part Number
- MASW4030G
- Description
- GaAs
- Min Frequency(MHz)
- 50
- Max Frequency(MHz)
- 4000
- Isolation(dB)
- 53
- Insertion Loss (dB)
- 0.600
- IIP3(dBm)
- 46
- IP1dB(dBm)
- 30
Features
- Absorbtive or Reflective
- Independent Bias Control
- Fast Switching Speed: 3 ns Typical
- Ultra Low DC Power Consumption
- Excellent Temperature Stability
- Excellent Intermodulation Products
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches