MASW-011111-DIE
AlGaAs SP2T PIN Diode Switch with integrated bias circuits Wideband, 80 - 100 GHz
The MASW-011111-DIE is a wideband SP2T switch manufactured using MACOM’s patented AlGaAs PIN Diode MMIC process on a semi-insulating GaAs substrate. The device is fully passivated with silicon nitride and has an additional layer of BCB for scratch protection. This protective coating prevents damage to the circuit during automated or manual handling.
These devices are suitable for pick and place insertion.
Each RF port contains DC blocking capacitors and a DC bias circuit consisting of high impedance lines and RF radial stubs. This device has gold plated bonding pads at all RF and DC ports. RF and DC ground backside gold plating allows conventional chip bonding techniques using 80Au/20Sn solder, Indalloy solder, or electrically conductive silver epoxy.
Applications include satellite communications, millimeter-wave radar, and 94 GHz imaging in astronomy, defense, and security applications.
Product Specifications
- Part Number
- MASW-011111-DIE
- Description
- AlGaAs SP2T PIN Diode Switch with integrated bias circuits Wideband, 80 - 100 GHz
- Min Frequency(MHz)
- 80000
- Max Frequency(MHz)
- 100000
- Isolation(dB)
- 25
- Insertion Loss (dB)
- 0.800
Features
- 80 - 100 GHz Broadband Operating Frequency
- 0.8 dB Insertion Loss
- 25 dB Isolation
- Silicon Nitride Passivation
- BCB Scratch Protection
- Lead-Free AlGaAs MMIC Die
- Die Size: 1.33 x 1.055 x 0.1 mm
- RoHS* Compliant