HMIC Silicon PIN Diode

The MASW-002103-1363 is a SPDT, surmount, broadband, monolithic switch using two sets of series and shunt connected PIN diodes. This device is designed for use in broadband, low to moderate signal, high performance, switch applications up to 20 GHz. It is a surface mountable switch configured for optimized performance and offers a distinct advantage over MMIC, beamlead and chip and wire hybrid designs. Because the PIN diodes of the MASW-002103-1363 are integrated into the chip and kept within close proximity, the parasitics typically associated with other designs that use individual components are kept to a minimum. To minimize the parasitics and achieve high performance the MASW-002103-1363 is fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals, which form the series and shunt diodes or vias, to be imbeded in low loss, low dispersion glass. The combination of low loss glass and using tight spacing between elements results in an HMIC device with low loss and high isolation through low millimeter wave frequencies. The topside is fully encapsulated with silicon nitride and also has an additional layer of polymer for scratch and impact protection. The protective coating guards against damage to the junction and the anode airbridges during handling and assembly. On the backside of the chip gold metalized pads have been added to produce a solderable surmount device.