MAPC-A3008
GaN-on-SiC Amplifier, 45 W, 28 V, DC - 6 GHz
The MAPC-A3008 is a 45 W packaged, unmatched transistor utilizing a high performance, 0.15 μm GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3008 provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A3008
- Description
- GaN-on-SiC Amplifier, 45 W, 28 V, DC - 6 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 45.0
- Gain(dB)
- 14.5
- Efficiency
- 63
- Test Freq(GHz)
- 2.00
- Package
- air cavity ceramic package
Features
- Saturated Power: 45 W
- Drain Efficiency: 63 %
- Small Signal Gain: 14.5 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant
Applications
- Avionics: Mode-S, TCAS, JTIDS, DME and TACAN.
- Military Radio
- S-Band RADAR
- L-Band RADAR
- Electronic Warfare
- ISM
- General Amplification
- L, S and C-Band Amplifiers
- C-Band Radar Amplifiers