MAPC-A2011-B
GaN Amplifier 50 V, 90 W 3.7 - 4.0 GHz
The MAPC-A2011 is a high power GaN on Silicon Carbide HEMT D-mode amplifier designed for base station applications and optimized for 3.7 - 4.0 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 90W (49.5 dBm) in an 7.0 x 6.5mm DFN package.
Product Specifications
- Part Number
- MAPC-A2011-B
- Description
- GaN Amplifier 50 V, 90 W 3.7 - 4.0 GHz
- Min Frequency(MHz)
- 3700
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 90.0
- Gain(dB)
- 15.3
- Test Freq(GHz)
- 3.85
- PSAT(dBm)
- 50
Features
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 50 V Operation
- 100 % RF Tested
- Compatible with MACOM Power Management Bias Controller/Sequencer MABC-11040
- RoHS* Compliant
Compatible Parts
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