MAAP-011420-DIE
1 W High Performance GaN Travelling Wave Amplifier MMIC
The MAAP-011420-DIE is a 1 W High Performance GaN Travelling Wave Amplifier MMIC designed to operate from 1 to 40 GHz and is offered in bare die form. It is fully matched across the frequency band. The MAAP-011420-DIE has 30 dBm of output power and can be used as a wideband power amplifier. This device is ideally suited to satellite communication and radar applications. The MAAP-011420-DIE is manufactured using a high performance 100 nm gate length GaN-on-Si HEMT power technology (D01GH). This MMIC uses gold bonding pads and backside metallization and is fully protected with silicon nitride passivation to obtain the highest level of reliability.
Product Specifications
- Part Number
- MAAP-011420-DIE
- Description
- 1 W High Performance GaN Travelling Wave Amplifier MMIC
- Min Frequency(MHz)
- 1000
- Max Frequency(MHz)
- 40000
- Gain(dB)
- 15.0
- Output P1dB(dBm)
- 30.00
Features
- Gain: 15 dB
- Output Power: 30 dBm
- Power Supply: External VDD: 18 V, VG2: 9 V, IDD: 220 mA
- 50Ω Input & Output Matched
- Die Size: 2.07 x 1.31 x 0.1 mm
- RoHS* Compliant