MA4SW310B-1
HMIC PIN Diode with Bias
The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broadband switches with an integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while full area, gold, backside metallization allows for manual or automatic chip bonding via 80Au/20Sn solders or electrically conductive silver epoxy.
Product Specifications
- Part Number
- MA4SW310B-1
- Description
- HMIC PIN Diode with Bias
- Min Frequency(MHz)
- 2000
- Max Frequency(MHz)
- 26000
- Insertion Loss (dB)
- 1.200
- Isolation(dB)
- 47
- IIP3(dBm)
- 40
- CW Incident Power(W)
- 2
Features
- Broad Bandwidth Specified 2 to 18 GHz
- RoHS Compliant
- Polymer Protective Coating
- Glass Encapsulate
- Fully Monolithic Construction
- Integrated Bias Network
- Usable up to 26 GHz
- Low Insertion Loss / High Isolation
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
- PIN Diodes for Microwave Switch Designs
- List of recommended Drivers for MACOM Switches.pdf