ENGPA00238A
4-W, 50% p.a.e. GaN Power Amplifier, DIE, 8 – 11.5 GHz
The ENGPA00238A is a X-band GaN-on-SiC HEMT two-stage 4W, 50% power added efficiency (PAE) amplifier, that operates across 8 - 11.5 GHz. The design is 50 ohm matched and does not require any off-chip choke. The amplifier has a typical PAE of 50% or more across 8 to 11.5 GHz at 4 W output power, at 24 V bias. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity epoxy attachment.
Product Specifications
- Part Number
- ENGPA00238A
- Description
- 4-W, 50% p.a.e. GaN Power Amplifier, DIE, 8 – 11.5 GHz
- Min Frequency(MHz)
- 8000
- Max Frequency(MHz)
- 11500
- Gain(dB)
- 20.0
- PSAT(dBm)
- 36
- Bias Current(mA)
- 320
- PAE(%)
- 50.00
Features
- Operation Across 8 – 11.5 GHz
- Large Signal Gain: 20 dB
- 4 W Output; 50% PAE
- 1.5:1 input SWR, 8.7 – 11.6 GHz
- 1.5:1 output SWR, 9.4 – 11 GHz
- Die Size : 5.39 x 2.15 x 0.075 mm; 0.212 x 0.085 x 0.003 inch