ENGLA00262A
15-dB Gain pHEMT Low Noise Amplifier, 3 – 8 GHz
The ENGLA00262A is a wideband GaAs pHEMT one-stage 15-dB gain low noise distributed amplifier, operating across 3 to 8 GHz. The design is 50-ohm matched. The LNA has a typical noise figure of 2.1 dB across 3 to 8 GHz, at room temperature. Output third-order intercept point (OIP3) is typically above 20 dBm at 3 V, 13 mA bias. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity silver epoxy attachment.
Product Specifications
- Part Number
- ENGLA00262A
- Description
- 15-dB Gain pHEMT Low Noise Amplifier, 3 – 8 GHz
- Min Frequency(MHz)
- 3000
- Max Frequency(MHz)
- 8000
- Gain(dB)
- 15.0
- NF(dB)
- 2.10
- OIP3(dBm)
- 21.0
Features
- Operation Across 3 – 8 GHz
- Small Signal Gain: 15 dB
- Noise Figure: 2.1 dB
- I/O Return Loss: 15 dB
- OIP3: 21 dBm (3 V, 13 mA)
- Die Size: 2.65 x 1.41 x 0.1 mm; 3.74 sq. mm; 0.104 x 0.056 inch
- RoHS* Compliant