ENGDA00073

Wideband Distributed Amplifier, DIE, 0.75 to 22 GHz

 The ENGDA00073 is a wideband GaAs MMIC distributed amplifier die which  operates from 0.75 to 22 GHz. The design  is 50 ohm matched and includes onboard  bias circuitry. The amplifier delivers 10 dB  gain at 21 GHz with 1 dB of positive gain slope across the full band. The amplifier is extremely linear with OIP3 near 15 dB  better than OP1dB. The MMIC has gold  backside metallization and is designed to  be silver epoxy attached. The RF  interconnects are designed to account for  wire bonds and external microstrip flares  for optimal integrated return loss. No  additional ground interconnects are  required. 

Product Specifications

Part Number
ENGDA00073
Description
Wideband Distributed Amplifier, DIE, 0.75 to 22 GHz
Min Frequency(MHz)
750
Max Frequency(MHz)
22000
Gain(dB)
10.0
Output P1dB(dBm)
18.00
OIP3(dBm)
36.0
Bias Current(mA)
175
NF(dB)
6.0

Features

  • Wideband Performance
  • High Linearity
  • Positive Gain Slope: 2.5 dB
  • Excellent Return Loss : 20 dB typical
  • Die Size : 4.78 x 2.46 x 0.1 mm; 0.188 x 0.097 x 0.004 inch
  • RoHS* Compliant

Technical Resources

Datasheet


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ENGDA00073
Wideband Distributed Amplifier, DIE, 0.75 to 22 GHz