GaN High Power Amplifier, 1 W 12.7 - 18.0 GHz

The CMPA1D1J001S is a 1 W packaged MMIC HPA utilizing a high performance, 0.15 μm GaN-on-SiC production process. The CMPA1D1J001S operates from 12.7 - 18.0 GHz and supports both radar and communication applications within both military and commercial markets. The CMPA1D1J001S achieves 1 W of saturated output power with 23 dB of large signal gain and typically 30% power-added efficiency under CW operation. Packaged in a 4x3 mm plastic over-mold QFN, the CMPA1D1J001S provides superior broadband performance and environmental robustness in a small form factor allowing customers to improve SWaP-C benchmarks in their next-generation systems.