25 W; DC - 15 GHz; 40 V; GaN HEMT

The CGHV1F025S is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT)  designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on an X-Band (8.9 – 9.6-GHz) amplifier. The CGHV1F025S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40-V to as low as 20-V VDD; maintaining high gain and efficiency.