CGHV14800

850 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems

The CGHV14800 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14800 ideal for 1.2 - 1.4 GHz L-Band radar-amplifier applications. The package options are ceramic/metal flange (CGHV14800F) and pill package (CGHV14800P).

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Product Specifications

Part Number: CGHV14800
Description: 850 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems
Min Frequency(MHz): 1200
Max Frequency(MHz): 1400
Gain(dB): 16.0
Package Category: Flange

Features

900 W Typical Output Power
14 dB Power Gain
70% Typical Drain Efficiency
<0.3 dB Pulsed Amplitude Droop
Internally input and output matched

Technical Resources

Datasheet

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CGHV14800F

800W, GaN HEMT, 50V, 1.2-1.4GHz, PULSED,

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CGHV14800F-AMP

AMPLIFIER ASSY, 1.2 - 1.4GHz, INCLUDES C

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CGHV14800F1

Amplifier,800W,GaN,G50V3, 50V,1.2-1.4GHz

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