CG2H80030D-GP4
30 W; 8.0 GHz; GaN HEMT Die
The CG2H80030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
Product Specifications
- Part Number
- CG2H80030D-GP4
- Description
- 30 W; 8.0 GHz; GaN HEMT Die
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 8000
- Gain(dB)
- 16.5
- Package Category
- Die
Features
- 28 V Operation
- 30 W Typical PSAT
- High Breakdown Voltage
- High Temperature Operation
- Up to 8 GHz Operation
- High Efficiency