WST33H0NC
GaN Amplifier 50 V, 300 W, 2.40 - 2.50 GHz
The WST33H0NC is a 300 W packaged, partiallymatched amplifier utilizing the high performance, 50 V, 0.25 µm GaN-on-SiC production process. This amplifier operates from 2.40 - 2.50 GHz and targets microwave heating applications. Available in a thermally-enhanced, Cu-based package, the WST33H0NC provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- WST33H0NC
- Description
- GaN Amplifier 50 V, 300 W, 2.40 - 2.50 GHz
- Min Frequency(MHz)
- 2400
- Max Frequency(MHz)
- 2500
- Peak Output Power(W)
- 300
- Gain(dB)
- 17.0
- Efficiency(%)
- 75
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Push-Pull
- Technology
- GaN-on-SiC
Features
- Drain Efficiency = 75%
- MACOM PURE CARBIDE Amplifier Series
- Large Signal Gain = 17 dB
- Saturated Output Power = 300 W
- Output Power = 55 dBm
- CW Operation
- RoHS* Compliant