WSGPC04
GaN-on-SiC Transistor 9.5 W, 48 V, Up to 5000 MHz
The WSGPC04 GaN-on-SiC HEMT designed for base station applications and optimized for 2496 - 2690 MHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 9.5 W (37.8 dBm) in an 4.0 x 4.5 mm DFN package.
Product Specifications
- Part Number
- WSGPC04
- Description
- GaN-on-SiC Transistor 9.5 W, 48 V, Up to 5000 MHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 5000
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 9.5
- Gain(dB)
- 18.8
- PSAT(dBm)
- 38
Features
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 48 V Capable Operation
- 100% RF Tested
- RoHS* Compliant