WGC40680V1A

Thermally Enhanced GaN Amplifier 500 W, 48 V, 3700 - 3980 MHz

The WGC40680 is a 500 W (P3dB) GaN-on-Silicon Carbide HEMT Amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally enhanced package with earless flange.

Product Specifications

Part Number
WGC40680V1A
Description
Thermally Enhanced GaN Amplifier 500 W, 48 V, 3700 - 3980 MHz
Min Frequency(MHz)
3700
Max Frequency(MHz)
3980
Supply Voltage(V)
48
PSAT Watt(W)
500.0
Gain(dB)
12.4
Efficiency
42.5
Test Freq(GHz)
3.98
Package
TO248-8L
PSAT(dBm)
57

Features

  • GaN-on-SiC HEMT Technology
  • Pulsed CW Performance: 3980 MHz, 48 V, 40 μμs pulse width, 10% Duty Cycle, Combined Outputs
  • Output Power @ P3dB = 500 W
  • Efficiency @ P3dB = 58%
  • Thermally Enhanced Package
  • RoHS* Compliant

Technical Resources

Datasheet


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WGC40680V1A
Thermally Enhanced GaN Amplifier 500 W, 48 V, 3700 - 3980 MHz