WGC18630
Thermally Enhanced GaN Amplifier 48 V, 610 W, 1805 - 1880 MHz
The WGC18630 is a 610 W (P4dB) GaN-on-SiC HEMT Amplifier designed for 5G base station application and optimized for 1805 - 1880 MHz modulated signal operation. It features high efficiency, and a thermally enhanced package with earless flange.
Product Specifications
- Part Number
- WGC18630
- Description
- Thermally Enhanced GaN Amplifier 48 V, 610 W, 1805 - 1880 MHz
- Min Frequency(MHz)
- 1805
- Max Frequency(MHz)
- 1880
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 610.0
- Gain(dB)
- 16.7
- Efficiency
- 58.7
- Test Freq(GHz)
- 1.81
- Package
- TO288-8L
- PSAT(dBm)
- 58
Features
- Optimized for Cellular Base Station Applications
- GaN on SiC HEMT Technology
- 48 V Operation
- Pulsed CW Performance: 1842 MHz, 48 V, 40 μs Pulse Width, 10% Duty Cycle, Combined Outputs
- Output Power @ P4dB = 610 W
- Efficiency @ P4dB = 73%
- 100 % RF Tested
- RoHS* Compliant