UF28100V
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
Product Specifications
- Part Number
- UF28100V
- Description
- RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
- Min Frequency(MHz)
- 100
- Max Frequency(MHz)
- 500
- Bias Voltage(V)
- 28.0
- Pout(W)
- 100.00
- Gain(dB)
- 10.00
- Efficiency(%)
- 50
Features
- N-channel Enhancement Mode Device
- High Saturated Output Power
- Lower Capacitances for Broadband Operation • High saturated output power • Lower noise figure than competitive devices
- DMOS Structure
- Lower Noise Figure than Competitive Devices
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)