PXFC191507FC-V1

High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz

The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Product Specifications

Part Number
PXFC191507FC-V1
Description
High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz
Min Frequency(MHz)
1805
Max Frequency(MHz)
1990
Gain(dB)
20.5
Package Category
Earless

Features

  • Broadband internal input and output matching
  • Typical Pulsed CW performance; 1990 MHz; 28 V; class AB test: Output power at P1dB = 140 W; Efficiency = 54%; Gain = 19.5 dB
  • Capable of handling 10:1 VSWR @28 V; 150 W (CW) output power
  • Integrated ESD protection: Human Body Model; Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant

Technical Resources

Datasheet

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PXFC191507FC-V1
High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz
Order Get a Quote Get a Sample