PTVA104501EH-V1

High Power RF LDMOS FET 450 W; 50 V; 960 - 1215 MHz

The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTVA104501EH-V1
Description
High Power RF LDMOS FET 450 W; 50 V; 960 - 1215 MHz
Min Frequency(MHz)
960
Max Frequency(MHz)
1215
Peak Output Power(W)
450
Gain(dB)
17.5
Efficiency(%)
58
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Bolt Down
Technology
LDMOS

Features

  • Broadband internal input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


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PTVA104501EH-V1
Transistor, LDMOS RF, 960,1215MHz, 450W