PTVA101K02EV-V1

High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTVA101K02EV-V1
Description
High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz
Min Frequency(MHz)
1030
Max Frequency(MHz)
1090
Peak Output Power(W)
900
Gain(dB)
18.0
Efficiency(%)
65
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Bolt Down
Technology
LDMOS

Features

  • Broadband input matching
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE-S pulse condition; (32S ON / 18S OFF) X 80;LTDF = 6.4%.

Technical Resources

Datasheet


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PTVA101K02EV-V1
Transistor LDMOS RF, 1030/1090MHz, 920W