PTRA095908NB-V1

High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz

The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced plastic overmold package with earless flange.

Product Specifications

Part Number
PTRA095908NB-V1
Description
High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz
Min Frequency (MHz)
920
Max Frequency(MHz)
960
P3dB Output Power(W)
460
Gain(dB)
17.5
Efficiency(%)
52
Operating Voltage(V)
48
Package Category
Surface Mount
Form
Packaged Discrete Transistor
Technology
LDMOS

Features

  • Broadband internal input and output matching
  • Asymmetric Doherty design Main: P1dB = 250 W Typ Peak: P1dB = 400 W Typ
  • Typical pulsed CW performance; 942 MHz; 48 V; Doherty configuration; 10 μs; 10% duty cycle Output power at P1dB = 160 W Output power at P3dB = 520 W Efficiency = 58% (POUT = 109 W) Gain = 19 dB (POUT = 109 W)

Technical Resources

Datasheet


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PTRA095908NB-V1
Amplifier 925-960MHz 520W 48V LDMOS FET