PTRA095908NB-V1
High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz
The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced plastic overmold package with earless flange.
Product Specifications
- Part Number
- PTRA095908NB-V1
- Description
- High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz
- Min Frequency (MHz)
- 920
- Max Frequency(MHz)
- 960
- P3dB Output Power(W)
- 460
- Gain(dB)
- 17.5
- Efficiency(%)
- 52
- Operating Voltage(V)
- 48
- Package Category
- Surface Mount
- Form
- Packaged Discrete Transistor
- Technology
- LDMOS
Features
- Broadband internal input and output matching
- Asymmetric Doherty design Main: P1dB = 250 W Typ Peak: P1dB = 400 W Typ
- Typical pulsed CW performance; 942 MHz; 48 V; Doherty configuration; 10 μs; 10% duty cycle Output power at P1dB = 160 W Output power at P3dB = 520 W Efficiency = 58% (POUT = 109 W) Gain = 19 dB (POUT = 109 W)