NPT25015
GaN Amplifier 28 V, 23 W, DC - 3 GHz
The NPT25015 GaN HEMT is a power transistor optimized for DC - 3 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 23 W. This transistor is assembled in an industry standard surface mount plastic package. The NPT25015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Product Specifications
- Part Number
- NPT25015
- Description
- GaN Amplifier 28 V, 23 W, DC - 3 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 3000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 23.0
- Gain(dB)
- 14.0
- Test Freq(GHz)
- 2.50
- Package
- SOIC8NE
- PSAT(dBm)
- 44
- Package Category
- Plastic
Features
- Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz
- 23 W P3dB peak envelope power (PEP)
- 1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz
- 100% RF tested
- Thermally-enhanced industry standard package
- High reliability gold metallization process
- Subject to EAR99 Export Control
- Lead-Free
- RoHS Compliant
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
- Surfacing Mounting Instructions - Footprint Guidelines
- Moisture Effects on the Soldering of Plastic Encapsulated Devices