MSS30-254-E30
Low Barrier Silicon Schottky Diodes
MACOM's MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.
Product Specifications
- Part Number
- MSS30-254-E30
- Description
- Low Barrier Silicon Schottky Diodes
- Vf(V)
- 0.2500
- Vb
- 2.00
- Total Capacitance(pF)
- 0.300
- Dynamic Resistance(ohms)
- 12.0
Features
- VF , RD and CJ matching options
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Chip, beam lead or packaged devices