MRF173
The RF MOSFET Line 80W, 175MHz, 28V
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.
Product Specifications
- Part Number
- MRF173
- Description
- The RF MOSFET Line 80W, 175MHz, 28V
- Min Frequency(MHz)
- 5
- Max Frequency(MHz)
- 175
- Bias Voltage(V)
- 28.0
- Pout(W)
- 80.00
- Gain(dB)
- 11.00
- Efficiency(%)
- 55
Features
- N–Channel Enhancement Mode MOSFET
- Low Thermal Resistance
- Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.)
- Nitride Passivated Die for Enhanced Reliability
- Ruggedness Tested at Rated Output Power
- Excellent Thermal Stability, Suite for Class A Operation
- Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)