MMD810-T86

Silicon Step Recovery Diodes

The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.

Product Specifications

Part Number
MMD810-T86
Description
Silicon Step Recovery Diodes
Lifetime(ns)
70
Reverse Voltage, Min(V)
50
Tt(pS)
200
Total Capacitance Min (pF)(pF)
1.68
Total Capacitance Max (pF)(pF)
2.68
Total Capacitance, min(CT)
1.68
Total Capacitance, max(CT)
2.68

Technical Resources

Datasheet


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MMD810-T86
Silicon Step Recovery Diodes