MASW-010351
SP5T High Isolation Terminated Switch
The MASW-010351 is an industry leading high isolation single pole five throw (SP5T) switch. This device design is optimized to take advantage of separate GaAs pHEMT switch die and CMOS driver die. The switch circuit design is symmetric and combined with the separate CMOS decoder allows it to maintain an excellent combination of insertion loss and isolation for all states. This makes the device ideal for band switching in multi-channel and multi-mode base-station applications as well as other applications where a compact, high isolation, SP5T switch is required. The MASW-010351 switch die is fabricated using a mature 0.5 micron gate length GaAs pHEMT process and features full passivation for enhanced performance and reliability. The MASW-010351 is offered in an industry standard lead-free 4mm 24-Lead PQFN RoHS compliant plastic package, which is ideal for high volume surface mount reflow assembly.
Product Specifications
- Part Number
- MASW-010351
- Description
- SP5T High Isolation Terminated Switch
- Min Frequency(MHz)
- 10
- Max Frequency(MHz)
- 4000
- Insertion Loss (dB)
- 1.400
- Isolation(dB)
- 57
- IIP3(dBm)
- 50
- CW Incident Power(W)
- 1.0
Features
- Isolation: 51 dB @ 2.1 GHz
- RoHS* Compliant
- 260°C Reflow Compatible
- Lead-Free 4 mm 24-Lead PQFN package
- 50 O Terminated Outputs (Off-State)
- 6 States: 5 ON paths and All-Off State
- Low Gate Lag for timing sensitive applications
- Integral CMOS 3:5 Decoder, Only 3 Control Pins
- Input IP3: 50 dBm Typical @ 2.1 GHz
- nsertion Loss: 1.0 dB @ 2.1 GHz
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Moisture Effects on the Soldering of Plastic Encapsulated Devices
- Surface Mounting Instructions for PQFN Packages
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches