MASW-007813-000000
GaAs
MACOM’s MASW-007813 is a GaAs pHEMT MMIC single pole four throw (SP4T) high power switch in a low cost, low profile, lead-free 3 mm PQFN 16-lead package. The MASW-007813 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as CDMA handset and other related applications. The MASW-007813 can be used in all systems operating up to 3 GHz requiring high power at low control voltage. The MASW-007813 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process features full passivation for performance and reliability.
Product Specifications
- Part Number
- MASW-007813-000000
- Description
- GaAs
- Min Frequency(MHz)
- 500
- Max Frequency(MHz)
- 3000
- Insertion Loss (dB)
- 0.800
- Isolation(dB)
- 27
- IIP3(dBm)
- 58
Features
- Low Voltage Operation: 2.5 V
- RoHS* Compliant
- 260°C Re-flow Compatible
- Halogen-Free “Green” Mold Compound
- Low Profile, Lead-Free 3 mm PQFN Package
- 0.5 micron GaAs pHEMT Process
- High Isolation: 25 dB at 2 GHz
- Low Harmonics: < -66 dBc at +34 dBm & 1 GHz • Low Insertion Loss: 0.7 dB at 1 GHz
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Moisture Effects on the Soldering of Plastic Encapsulated Devices
- Surface Mounting Instructions for PQFN Packages
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches