MASW-005100-1194
HMIC SP5T Silicon PIN Diode Switch
The MASW-005100-1194 is a SP5T, series-shunt, broad band, PIN diode, switch made with MACOM’s unique HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows for the incorporation of silicon pedestals that form the series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. This high performance switch is suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V / -5 V, TTL controlled PIN diode driver, 50 ns switching speeds are achieved.
Product Specifications
- Part Number
- MASW-005100-1194
- Description
- HMIC SP5T Silicon PIN Diode Switch
- Min Frequency(MHz)
- 50
- Max Frequency(MHz)
- 26500
- Insertion Loss (dB)
- 0.700
- Isolation(dB)
- 50
- IIP3(dBm)
- 40
- CW Incident Power(W)
- 2.0
- Package Category
- Die/Bumped Die
- Package
- DIE
- ROHS
- Yes
Features
- Ultra Broad Bandwidth: 50MHz to 26GHz
- +33dBm Power Handling
- Reliable, Fully Monolithic, Glass Encapsulated Construction
- 50nS Switching Speed
- 0.9 Insertion Loss: 38dB Isolation at 20GHz
- RoHS Compliant
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches