MASW-004102-12760

HMIC Si PIN Diode with Bias

The MASW-004102-12760 device is a SP4T broadband HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. Yellow areas denote wire bond pads These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80nS switching speeds can be achieved.

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Product Specifications

Part Number
MASW-004102-12760
Description
HMIC Si PIN Diode with Bias
Min Frequency(MHz)
2
Max Frequency(MHz)
18000
Insertion Loss (dB)
1.500
Isolation(dB)
50
IIP3(dBm)
40
CW Incident Power(W)
2

Features

  • Broad Bandwidth Specified up to 18 GHz
  • RoHS* Compliant
  • 260°C Reflow Compatible
  • Fully Monolithic
  • Rugged, Glass Encapsulated Construction
  • Low Insertion Loss / High Isolation
  • Integrated Bias Network
  • Usable up to 26 GHz

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

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MASW-004102-12760G
4T HMIC SWITCH W/BIAS NETWORK
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MASW-004102-12760W
4T Switch W/BiasNetwork
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