MARP-BA56

Backside Avalanche Photodiode 56 GBaud

 The MARP-BA56 is a backside-illuminated avalanche photodiode (APD) chip. This chip is usable from 1250 to 1650 nm, and capable of very high sensitivity when coupled to a low noise amplifier for transmission applications up to 56 Gb/s NRZ and 112 Gb/s PAM4 modulation.This APD utilizes a proprietary design for high quantum efficiency and excellent reliability that meets Telcordia GR-468 reliability standards for hermetic products and is RoHS* compliant. This product is best suited for use in hermetic assemblies. Both bare die for flip-chip applications and chip-on-carrier (CoC) configurations are available.

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Product Specifications

Part Number
MARP-BA56
Description
Backside Avalanche Photodiode 56 GBaud
Bandwidth(GHz)
30.00
Responsivity(A/W)
4.20
Capacitance(fF)
30.000

Features

  • Avalanche Photodiode Chip
  • High Data Rate, 56 Gb/s NRZ & 112 Gb/s PAM4
  • High Sensitivity, -16 dBm
  • 250 - 1650 nm Wavelength Range

Technical Resources

Data Sheet

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MARP-BA56-011LC1
Backside Illumniated 56G APD on carrier
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MARP-BA56-011LC2
Back Illuminated 56G APD CoC (coplanar)
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MARP-BA56-011LD
Backside Illuminated 56G APD
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