MAPC-C38075-AD
RF GaN Amplifier 10 W AVG, 48 V, 3400 - 3800 MHz
The MAPC-C38075-AD is a GaN on Silicon Carbide HEMT designed for base station applications. The circuit is optimized for modulated signal operation within the 3400 - 3800 MHz frequency band. This device supports pulsed and linear operation with peak output power levels of up to 70 W (48.5 dBm) in a 7.0 x 10 mm DFN package.
Product Specifications
- Part Number
- MAPC-C38075-AD
- Description
- RF GaN Amplifier 10 W AVG, 48 V, 3400 - 3800 MHz
- Min Frequency(MHz)
- 3400
- Max Frequency(MHz)
- 3800
- Supply Voltage(V)
- 48
- Gain(dB)
- 14.1
- PSAT(dBm)
- 40
Features
- GaN on SiC HEMT Technology
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 48 V Capable Operation
- 100% DC and RF Tested
- RoHS* Compliant