MAPC-A3029
GaN on SiC Transistor, 40 W, 65 V DC - 6 GHz
The MAPC-A3029-AB is a 40 W packaged, unmatched transistor. This transistor operates up to 1.4 GHz and supports both defense and commercial -related avionics, and radar applications. Under 65 V operation, the MAPC-A3029-AB typically achieves 40 W of output power with 18 dB of large signal gain and 72% drain efficiency via a 0.96 - 1.4 GHz reference design. Packaged in a thermally-enhanced, flange package, the MAPC-A3029-AB provides superior performance under long pulse operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A3029
- Description
- GaN on SiC Transistor, 40 W, 65 V DC - 6 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Supply Voltage(V)
- 65
- PSAT Watt(W)
- 40.0
- Gain(dB)
- 21.0
- Efficiency
- 72
Features
- Output Power: 40W
- Drain Efficiency: 72%
- Small Signal Gain: 21 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant