MAPC-A3009
GaN-on-SiC Transistor, 60 W, 28 V, DC - 4 GHz
The MAPC-A3009-AB is a 60 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3009-AB provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A3009
- Description
- GaN-on-SiC Transistor, 60 W, 28 V, DC - 4 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 60.0
- Gain(dB)
- 16.0
- Efficiency
- 67
- Test Freq(GHz)
- 2.50
- Package
- air cavity ceramic package
- PSAT(dBm)
- 69
Features
- Saturated Power: 60 W
- Drain Efficiency: 67 %
- Small Signal Gain: 16 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant