MAPC-A3007
GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz
The MAPC-A3007-AB is a 30 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN-on-SiC production process. This transistor supports both defense and commercial-related applications. Offered in a thermally-enhanced flange package, the MAPC-A3007-AB provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A3007
- Description
- GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 30.0
- Gain(dB)
- 15.0
- Efficiency
- 67
- Test Freq(GHz)
- 3.70
- Package
- air cavity ceramic package
- PSAT(dBm)
- 39
Features
- Saturated Power: 30 W
- Drain Efficiency: 67 %
- Small Signal Gain: 15 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant