MAPC-A2520
GaN Amplifier 50 V, 30 W AVG
The MAPC-A2520 is a high power GaN-on-Silicon Carbide HEMT D-mode amplifier suitable for asymmetrical Doherty base station applications with 30 W average power and optimized for 3.8 - 4.2 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 250 W (54 dBm) in an air cavity ceramic package.
Product Specifications
- Part Number
- MAPC-A2520
- Description
- GaN Amplifier 50 V, 30 W AVG
- Min Frequency(MHz)
- 3800
- Max Frequency(MHz)
- 4200
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 30.0
- Gain(dB)
- 14.2
- Efficiency
- 56
- Test Freq(GHz)
- 4.00
- Package
- air cavity ceramic package
- PSAT(dBm)
- 45
Features
- MACOM PURE CARBIDEĀ® Amplifier Series
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Asymmetrical Doherty Application
- High Terminal Impedances for Broadband Performance
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant