MAPC-A2011-B

GaN Amplifier 50 V, 90 W 3.7 - 4.0 GHz

The MAPC-A2011 is a high power GaN on Silicon Carbide HEMT D-mode amplifier designed for base station applications and optimized for 3.7 - 4.0 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 90W (49.5 dBm) in an 7.0 x 6.5mm DFN package.

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Product Specifications

Part Number
MAPC-A2011-B
Description
GaN Amplifier 50 V, 90 W 3.7 - 4.0 GHz
Min Frequency(MHz)
3700
Max Frequency(MHz)
4000
Supply Voltage(V)
50
PSAT Watt(W)
90.0
Gain(dB)
15.3
Test Freq(GHz)
3.85
Package
7.0 x 6.5 mm DFN
PSAT(dBm)
50
Package Category
DFN

Features

  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100 % RF Tested
  • Compatible with MACOM Power Management Bias Controller/Sequencer MABC-11040
  • RoHS* Compliant

Technical Resources

Datasheet

Order from MACOM

MAPC-A2011-BD000
Amplifier,3.7-4.0 GHz,GaN-SiC,DFN 7x6.5
Order Get a Quote Get a Sample
MAPC-A2011-BDSB1
Amplifier,3.7-4.0 GHz,GaN-SiC,DFN,SMB
Order Get a Quote Get a Sample
MAPC-A2011-BDTR1
Amplifier,3.7-4.0 GHz,GaN-SiC,DFN, T&R
Order Get a Quote Get a Sample

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